TK4R1A10PL,S4X

Toshiba Semiconductor and Storage

Product No:

TK4R1A10PL,S4X

Manufacturer:

Package:

TO-220SIS

Datasheet:

Description:

X35 PB-F POWER MOSFET TRANSISTOR

Quantity:

Delivery:

Payment:

In Stock : 35

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Operating Temperature	175°C
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	6320 pF @ 50 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	104 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	4.1mOhm @ 40A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 1mA
Supplier Device Package	TO-220SIS
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	54W (Tc)
Series	-
Package / Case	TO-220-3 Full Pack
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tube
Base Product Number	TK4R1A10