TK56A12N1,S4X
detaildesc

TK56A12N1,S4X

Toshiba Semiconductor and Storage

Product No:

TK56A12N1,S4X

Package:

TO-220SIS

Datasheet:

-

Description:

MOSFET N-CH 120V 56A TO220SIS

Quantity:

Delivery:

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Payment:

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In Stock : 99

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $5.0715

    $5.0715

  • 10

    $4.56435

    $45.6435

  • 50

    $4.0572

    $202.86

  • 100

    $3.55005

    $355.005

  • 500

    $3.44862

    $1724.31

  • 1000

    $3.381

    $3381

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 4200 pF @ 60 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 69 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 7.5mOhm @ 28A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 1mA
Supplier Device Package TO-220SIS
Drain to Source Voltage (Vdss) 120 V
Power Dissipation (Max) 45W (Tc)
Series U-MOSVIII-H
Package / Case TO-220-3 Full Pack
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 56A (Tc)
Mfr Toshiba Semiconductor and Storage
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number TK56A12