TK5R3E08QM,S1X
detaildesc

TK5R3E08QM,S1X

Toshiba Semiconductor and Storage

Product No:

TK5R3E08QM,S1X

Package:

TO-220

Datasheet:

-

Description:

UMOS10 TO-220AB 80V 5.3MOHM

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

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In Stock : 4

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.238265

    $1.238265

  • 10

    $1.114439

    $11.14439

  • 50

    $0.990612

    $49.5306

  • 100

    $0.866785

    $86.6785

  • 500

    $0.84202

    $421.01

  • 1000

    $0.82551

    $825.51

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Product Information

Parameter Info

User Guide

Operating Temperature 175°C
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 3980 pF @ 40 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 55 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 5.3mOhm @ 50A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 700µA
Supplier Device Package TO-220
Drain to Source Voltage (Vdss) 80 V
Power Dissipation (Max) 150W (Tc)
Series U-MOSX-H
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Mfr Toshiba Semiconductor and Storage
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Package Tube