TK6R7P06PL,RQ

Toshiba Semiconductor and Storage

Product No:

TK6R7P06PL,RQ

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Package:

DPAK

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Description:

MOSFET N-CHANNEL 60V 46A DPAK

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Operating Temperature	175°C
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	1990 pF @ 30 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	26 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	6.7mOhm @ 23A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 300µA
Supplier Device Package	DPAK
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	66W (Tc)
Series	U-MOSIX-H
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	46A (Tc)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	TK6R7P06