TK7E80W,S1X

Toshiba Semiconductor and Storage

Product No:

TK7E80W,S1X

Manufacturer:

Package:

TO-220

Datasheet:

Description:

MOSFET N-CH 800V 6.5A TO220

Quantity:

Delivery:

Payment:

In Stock : 43

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Operating Temperature	150°C
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	700 pF @ 300 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	13 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	950mOhm @ 3.3A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 280µA
Supplier Device Package	TO-220
Drain to Source Voltage (Vdss)	800 V
Power Dissipation (Max)	110W (Tc)
Series	DTMOSIV
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	6.5A (Ta)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	TK7E80