TPH1R306PL,L1Q
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TPH1R306PL,L1Q

Toshiba Semiconductor and Storage

Product No:

TPH1R306PL,L1Q

Package:

8-SOP Advance (5x5)

Datasheet:

-

Description:

MOSFET N-CH 60V 100A 8SOP

Quantity:

Delivery:

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Payment:

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In Stock : 726

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.3332

    $1.3332

  • 10

    $1.19988

    $11.9988

  • 50

    $1.06656

    $53.328

  • 100

    $0.93324

    $93.324

  • 500

    $0.906576

    $453.288

  • 1000

    $0.8888

    $888.8

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Product Information

Parameter Info

User Guide

Operating Temperature 175°C
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 8100 pF @ 30 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 91 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 1.34mOhm @ 50A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 1mA
Supplier Device Package 8-SOP Advance (5x5)
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 960mW (Ta), 170W (Tc)
Series U-MOSIX-H
Package / Case 8-PowerVDFN
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Mfr Toshiba Semiconductor and Storage
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number TPH1R306