TPH2900ENH,L1Q

Toshiba Semiconductor and Storage

Product No:

TPH2900ENH,L1Q

Manufacturer:

Package:

8-SOP Advance (5x5)

Datasheet:

Description:

MOSFET N-CH 200V 33A 8SOP

Quantity:

Delivery:

Payment:

In Stock : 9495

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Operating Temperature	150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	2200 pF @ 100 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	22 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	29mOhm @ 16.5A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 1mA
Supplier Device Package	8-SOP Advance (5x5)
Drain to Source Voltage (Vdss)	200 V
Power Dissipation (Max)	78W (Tc)
Series	U-MOSVIII-H
Package / Case	8-PowerVDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	33A (Ta)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	TPH2900