TPN1110ENH,L1Q
Toshiba Semiconductor and Storage
Product No:
TPN1110ENH,L1Q
Manufacturer:
Package:
8-TSON Advance (3.1x3.1)
Datasheet:
-
Description:
MOSFET N-CH 200V 7.2A 8TSON
Quantity:
Delivery:
Payment:
In Stock : 15413
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$0.956813
$0.956813
10
$0.861131
$8.61131
50
$0.76545
$38.2725
100
$0.669769
$66.9769
500
$0.650633
$325.3165
1000
$0.637875
$637.875
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Product Information
Parameter Info
User Guide
| Operating Temperature | 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 600 pF @ 100 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 7 nC @ 10 V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 114mOhm @ 3.6A, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 200µA |
| Supplier Device Package | 8-TSON Advance (3.1x3.1) |
| Drain to Source Voltage (Vdss) | 200 V |
| Power Dissipation (Max) | 700mW (Ta), 39W (Tc) |
| Series | U-MOSVIII-H |
| Package / Case | 8-PowerVDFN |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 7.2A (Ta) |
| Mfr | Toshiba Semiconductor and Storage |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Tape & Reel (TR) |
| Base Product Number | TPN1110 |
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