TPN22006NH,LQ

Toshiba Semiconductor and Storage

Product No:

TPN22006NH,LQ

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Package:

8-TSON Advance (3.3x3.3)

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Description:

MOSFET N-CH 60V 9A 8TSON

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Operating Temperature	150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	710 pF @ 30 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	12 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	22mOhm @ 4.5A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 100µA
Supplier Device Package	8-TSON Advance (3.3x3.3)
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	700mW (Ta), 18W (Tc)
Series	U-MOSVIII-H
Package / Case	8-PowerVDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	9A (Ta)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	TPN22006