TPN2R703NL,L1Q

Toshiba Semiconductor and Storage

Product No:

TPN2R703NL,L1Q

Manufacturer:

Package:

8-TSON Advance (3.1x3.1)

Datasheet:

Description:

MOSFET N-CH 30V 45A 8TSON

Quantity:

Delivery:

Payment:

In Stock : 3457

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Operating Temperature	150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	2100 pF @ 15 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	21 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	2.7mOhm @ 22.5A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.3V @ 300µA
Supplier Device Package	8-TSON Advance (3.1x3.1)
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	700mW (Ta), 42W (Tc)
Series	U-MOSVIII-H
Package / Case	8-PowerVDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	45A (Tc)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	TPN2R703