TPW1R306PL,L1Q
Toshiba Semiconductor and Storage
Product No:
TPW1R306PL,L1Q
Manufacturer:
Package:
8-DSOP Advance
Datasheet:
-
Description:
MOSFET N-CH 60V 260A 8DSOP
Quantity:
Delivery:
Payment:
In Stock : 2348
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$1.89
$1.89
10
$1.701
$17.01
50
$1.512
$75.6
100
$1.323
$132.3
500
$1.2852
$642.6
1000
$1.26
$1260
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Product Information
Parameter Info
User Guide
| Operating Temperature | 175°C |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 8100 pF @ 30 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 91 nC @ 10 V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 1.29mOhm @ 50A, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-DSOP Advance |
| Drain to Source Voltage (Vdss) | 60 V |
| Power Dissipation (Max) | 960mW (Ta), 170W (Tc) |
| Series | U-MOSIX-H |
| Package / Case | 8-PowerWDFN |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 260A (Tc) |
| Mfr | Toshiba Semiconductor and Storage |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Package | Tape & Reel (TR) |
| Base Product Number | TPW1R306 |
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