TRS4V65H,LQ

Toshiba Semiconductor and Storage

Product No:

TRS4V65H,LQ

Manufacturer:

Package:

4-DFN-EP (8x8)

Datasheet:

Description:

G3 SIC-SBD 650V 4A DFN8X8

Quantity:

Delivery:

Payment:

In Stock : 3566

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Speed	No Recovery Time > 500mA (Io)
Capacitance @ Vr, F	263pF @ 1V, 1MHz
Reverse Recovery Time (trr)	0 ns
Mounting Type	Surface Mount
Product Status	Active
Supplier Device Package	4-DFN-EP (8x8)
Current - Reverse Leakage @ Vr	55 µA @ 650 V
Series	-
Package / Case	4-VSFN Exposed Pad
Technology	SiC (Silicon Carbide) Schottky
Voltage - Forward (Vf) (Max) @ If	1.34 V @ 4 A
Mfr	Toshiba Semiconductor and Storage
Voltage - DC Reverse (Vr) (Max)	650 V
Package	Tape & Reel (TR)
Current - Average Rectified (Io)	4A
Operating Temperature - Junction	175°C