TRS6E65F,S1Q

Toshiba Semiconductor and Storage

Product No:

TRS6E65F,S1Q

Manufacturer:

Package:

TO-220-2L

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Description:

DIODE SIL CARB 650V 6A TO220-2L

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Speed	No Recovery Time > 500mA (Io)
Capacitance @ Vr, F	22pF @ 650V, 1MHz
Reverse Recovery Time (trr)	0 ns
Mounting Type	Through Hole
Product Status	Active
Supplier Device Package	TO-220-2L
Current - Reverse Leakage @ Vr	30 µA @ 650 V
Series	-
Package / Case	TO-220-2
Technology	SiC (Silicon Carbide) Schottky
Voltage - Forward (Vf) (Max) @ If	1.6 V @ 6 A
Mfr	Toshiba Semiconductor and Storage
Voltage - DC Reverse (Vr) (Max)	650 V
Package	Tube
Current - Average Rectified (Io)	6A
Operating Temperature - Junction	175°C (Max)
Base Product Number	TRS6E65