TSM060NB06LCZ C0G

Taiwan Semiconductor Corporation

Product No:

TSM060NB06LCZ C0G

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Package:

TO-220

Datasheet:

Description:

60V, 111A, SINGLE N-CHANNEL POWE

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	6273 pF @ 30 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	107 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	6mOhm @ 13A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	TO-220
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	2W (Ta), 156W (Tc)
Series	-
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	13A (Ta), 111A (Tc)
Mfr	Taiwan Semiconductor Corporation
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tube
Base Product Number	TSM060