TSM110NB04LCR RLG

Taiwan Semiconductor Corporation

Product No:

TSM110NB04LCR RLG

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Package:

8-PDFN (5.2x5.75)

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Description:

MOSFET N-CH 40V 12A/54A 8PDFN

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	1269 pF @ 20 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	23 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	11mOhm @ 12A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	8-PDFN (5.2x5.75)
Drain to Source Voltage (Vdss)	40 V
Power Dissipation (Max)	3.1W (Ta), 68W (Tc)
Series	-
Package / Case	8-PowerLDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	12A (Ta), 54A (Tc)
Mfr	Taiwan Semiconductor Corporation
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	TSM110