TSM60NC196CM2 RNG

Taiwan Semiconductor Corporation

Product No:

TSM60NC196CM2 RNG

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Package:

TO-263AB (D²PAK)

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Description:

600V, 28A, SINGLE N-CHANNEL POWE

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	1566 pF @ 300 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	39 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	196mOhm @ 9.5A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	5V @ 1mA
Supplier Device Package	TO-263AB (D²PAK)
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	152W (Tc)
Series	-
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	28A (Tc)
Mfr	Taiwan Semiconductor Corporation
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	TSM60