TW015Z120C,S1F

Toshiba Semiconductor and Storage

Product No:

TW015Z120C,S1F

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Package:

TO-247-4L(X)

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Description:

G3 1200V SIC-MOSFET TO-247-4L 1

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Operating Temperature	175°C
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	6000 pF @ 800 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	158 nC @ 18 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	21mOhm @ 50A, 18V
Product Status	Active
Vgs(th) (Max) @ Id	5V @ 11.7mA
Supplier Device Package	TO-247-4L(X)
Drain to Source Voltage (Vdss)	1200 V
Power Dissipation (Max)	431W (Tc)
Series	-
Package / Case	TO-247-4
Technology	SiC (Silicon Carbide Junction Transistor)
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	+25V, -10V
Drive Voltage (Max Rds On, Min Rds On)	18V
Package	Tube