VS-10ETF10S-M3

Vishay General Semiconductor - Diodes Division

Product No:

VS-10ETF10S-M3

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Package:

TO-263AB (D²PAK)

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Description:

DIODE GEN PURP 1KV 10A TO263AB

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Speed	Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F	-
Reverse Recovery Time (trr)	310 ns
Mounting Type	Surface Mount
Product Status	Active
Supplier Device Package	TO-263AB (D²PAK)
Current - Reverse Leakage @ Vr	100 µA @ 1000 V
Series	-
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1.33 V @ 10 A
Mfr	Vishay General Semiconductor - Diodes Division
Voltage - DC Reverse (Vr) (Max)	1000 V
Package	Tube
Current - Average Rectified (Io)	10A
Operating Temperature - Junction	-40°C ~ 150°C
Base Product Number	10ETF10