VS-3C08ET07T-M3

Vishay General Semiconductor - Diodes Division

Product No:

VS-3C08ET07T-M3

Manufacturer:

Package:

TO-220AC

Datasheet:

Description:

650 V POWER SIC GEN 3 MERGED PIN

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Speed	No Recovery Time > 500mA (Io)
Capacitance @ Vr, F	340pF @ 1V, 1MHz
Reverse Recovery Time (trr)	0 ns
Mounting Type	Through Hole
Product Status	Active
Supplier Device Package	TO-220AC
Current - Reverse Leakage @ Vr	45 µA @ 650 V
Series	-
Package / Case	TO-220-2
Technology	SiC (Silicon Carbide) Schottky
Voltage - Forward (Vf) (Max) @ If	1.5 V @ 8 A
Mfr	Vishay General Semiconductor - Diodes Division
Voltage - DC Reverse (Vr) (Max)	650 V
Package	Tube
Current - Average Rectified (Io)	8A
Operating Temperature - Junction	-55°C ~ 175°C