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VS-3C10ET07S2L-M3
Vishay General Semiconductor - Diodes Division
Product No:
VS-3C10ET07S2L-M3
Manufacturer:
Package:
TO-263AB (D²PAK)
Datasheet:
Description:
650 V POWER SIC GEN 3 MERGED PIN
Quantity:
Delivery:
Payment:
In Stock : 2051
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$3.3831
$3.3831
10
$3.04479
$30.4479
50
$2.70648
$135.324
100
$2.36817
$236.817
500
$2.300508
$1150.254
1000
$2.2554
$2255.4
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Product Information
Parameter Info
User Guide
| Speed | No Recovery Time > 500mA (Io) |
| Capacitance @ Vr, F | 445pF @ 1V, 1MHz |
| Reverse Recovery Time (trr) | 0 ns |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Supplier Device Package | TO-263AB (D²PAK) |
| Current - Reverse Leakage @ Vr | 55 µA @ 650 V |
| Series | - |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 10 A |
| Mfr | Vishay General Semiconductor - Diodes Division |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Package | Tape & Reel (TR) |
| Current - Average Rectified (Io) | 10A |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Base Product Number | VS-3C10 |
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