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VS-C10ET07T-M3
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VS-C10ET07T-M3

Vishay General Semiconductor - Diodes Division

Product No:

VS-C10ET07T-M3

Package:

TO-220AC

Datasheet:

pdf

Description:

DIODE SIL CARB 650V 10A TO220AC

Quantity:

Delivery:

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Payment:

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In Stock : 671

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.737921

    $1.737921

  • 10

    $1.564129

    $15.64129

  • 50

    $1.390337

    $69.51685

  • 100

    $1.216545

    $121.6545

  • 500

    $1.181787

    $590.8935

  • 1000

    $1.158614

    $1158.614

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Product Information

Parameter Info

User Guide

Speed Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F 430pF @ 1V, 1MHz
Mounting Type Through Hole
Product Status Obsolete
Supplier Device Package TO-220AC
Current - Reverse Leakage @ Vr 55 µA @ 650 V
Series -
Package / Case TO-220-2
Technology SiC (Silicon Carbide) Schottky
Voltage - Forward (Vf) (Max) @ If 1.8 V @ 10 A
Mfr Vishay General Semiconductor - Diodes Division
Voltage - DC Reverse (Vr) (Max) 650 V
Package Tube
Current - Average Rectified (Io) 10A
Operating Temperature - Junction -55°C ~ 175°C
Base Product Number C10ET07