AS6004
detaildesc

AS6004

ANBON SEMICONDUCTOR (INT'L) LIMITED

Product No:

AS6004

Package:

SOT-23-3L

Datasheet:

pdf

Description:

P-CHANNEL ENHANCEMENT MODE MOSFE

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

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In Stock : 1934

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.10968

    $0.10968

  • 10

    $0.09597

    $0.9597

  • 50

    $0.08226

    $4.113

  • 100

    $0.075405

    $7.5405

  • 500

    $0.071978

    $35.989

  • 1000

    $0.06855

    $68.55

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 930 pF @ 30 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 120mOhm @ 4A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3V @ 250µA
Supplier Device Package SOT-23-3L
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 1.5W (Ta)
Series -
Package / Case TO-236-3, SC-59, SOT-23-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 4A (Ta)
Mfr ANBON SEMICONDUCTOR (INT'L) LIMITED
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)