BSB165N15NZ3G
Infineon Technologies
Product No:
BSB165N15NZ3G
Manufacturer:
Package:
MG-WDSON-2-9
Datasheet:
-
Description:
BSB165N15 - 12V-300V N-CHANNEL P
Quantity:
Delivery:
Payment:
In Stock : 22079
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$1.807143
$1.807143
10
$1.626429
$16.26429
50
$1.445714
$72.2857
100
$1.265
$126.5
500
$1.228857
$614.4285
1000
$1.204762
$1204.762
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Product Information
Parameter Info
User Guide
| Operating Temperature | -40°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 2800 pF @ 75 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 16.5mOhm @ 30A, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 110µA |
| Supplier Device Package | MG-WDSON-2-9 |
| Drain to Source Voltage (Vdss) | 150 V |
| Power Dissipation (Max) | 2.8W (Ta), 78W (Tc) |
| Series | OptiMOS® |
| Package / Case | DirectFET™ Isometric MZ |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta), 45A (Tc) |
| Mfr | Infineon Technologies |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 8V, 10V |
| Package | Bulk |
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