BSC024NE2LSATMA1
detaildesc

BSC024NE2LSATMA1

Infineon Technologies

Product No:

BSC024NE2LSATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TDSON-8-5

Datasheet:

-

Description:

MOSFET N-CH 25V 25A/110A TDSON

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

In Stock : 8631

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.643545

    $0.643545

  • 10

    $0.579191

    $5.79191

  • 50

    $0.514836

    $25.7418

  • 100

    $0.450482

    $45.0482

  • 500

    $0.437611

    $218.8055

  • 1000

    $0.42903

    $429.03

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1700 pF @ 12 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 2.4mOhm @ 30A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2V @ 250µA
Supplier Device Package PG-TDSON-8-5
Drain to Source Voltage (Vdss) 25 V
Power Dissipation (Max) 2.5W (Ta), 48W (Tc)
Series OptiMOS™
Package / Case 8-PowerTDFN
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 25A (Ta), 110A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number BSC024