Home / Single FETs, MOSFETs / BSC060P03NS3EGATMA1
BSC060P03NS3EGATMA1
detaildesc

BSC060P03NS3EGATMA1

Infineon Technologies

Product No:

BSC060P03NS3EGATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TDSON-8-1

Datasheet:

-

Description:

MOSFET P-CH 30V 17.7/100A 8TDSON

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

In Stock : 3178

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.57624

    $0.57624

  • 10

    $0.50421

    $5.0421

  • 50

    $0.43218

    $21.609

  • 100

    $0.396165

    $39.6165

  • 500

    $0.378157

    $189.0785

  • 1000

    $0.36015

    $360.15

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 6020 pF @ 15 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 81 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 6mOhm @ 50A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.1V @ 150µA
Supplier Device Package PG-TDSON-8-1
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 2.5W (Ta), 83W (Tc)
Series OptiMOS™
Package / Case 8-PowerTDFN
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 17.7A (Ta), 100A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±25V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Package Tape & Reel (TR)
Base Product Number BSC060