BSC123N10LSGATMA1
detaildesc

BSC123N10LSGATMA1

Infineon Technologies

Product No:

BSC123N10LSGATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TDSON-8-1

Datasheet:

-

Description:

MOSFET N-CH 100V 10.6/71A 8TDSON

Quantity:

Delivery:

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Payment:

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In Stock : 4101

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.98091

    $0.98091

  • 10

    $0.882819

    $8.82819

  • 50

    $0.784728

    $39.2364

  • 100

    $0.686637

    $68.6637

  • 500

    $0.667019

    $333.5095

  • 1000

    $0.65394

    $653.94

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 4900 pF @ 50 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 68 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 12.3mOhm @ 50A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.4V @ 72µA
Supplier Device Package PG-TDSON-8-1
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 114W (Tc)
Series OptiMOS™
Package / Case 8-PowerTDFN
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 10.6A (Ta), 71A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number BSC123