BSC886N03LS G
detaildesc

BSC886N03LS G

Infineon Technologies

Product No:

BSC886N03LS G

Manufacturer:

Infineon Technologies

Package:

PG-TDSON-8

Datasheet:

-

Description:

N-CHANNEL POWER MOSFET

Quantity:

Delivery:

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Payment:

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In Stock : 2704

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.42

    $0.42

  • 10

    $0.3675

    $3.675

  • 50

    $0.315

    $15.75

  • 100

    $0.28875

    $28.875

  • 500

    $0.275625

    $137.8125

  • 1000

    $0.2625

    $262.5

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 2100 pF @ 15 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 26 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 6mOhm @ 30A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.2V @ 250µA
Supplier Device Package PG-TDSON-8
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 2.5W (Ta), 39W (Tc)
Series OptiMOS™3
Package / Case 8-PowerTDFN
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 13A (Ta), 65A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Bulk