BSC889N03LSG
detaildesc

BSC889N03LSG

Infineon Technologies

Product No:

BSC889N03LSG

Manufacturer:

Infineon Technologies

Package:

PG-TDSON-8

Datasheet:

-

Description:

N-CHANNEL POWER MOSFET

Quantity:

Delivery:

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Payment:

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In Stock : 211717

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.4872

    $0.4872

  • 10

    $0.4263

    $4.263

  • 50

    $0.3654

    $18.27

  • 100

    $0.33495

    $33.495

  • 500

    $0.319725

    $159.8625

  • 1000

    $0.3045

    $304.5

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1300 pF @ 15 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 9mOhm @ 30A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.2V @ 250µA
Supplier Device Package PG-TDSON-8
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 2.5W (Ta), 28W (Tc)
Series OptiMOS™ 3
Package / Case 8-PowerTDFN
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 13A (Ta), 45A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Bulk