BSP125L6433
detaildesc

BSP125L6433

Infineon Technologies

Product No:

BSP125L6433

Manufacturer:

Infineon Technologies

Package:

PG-SOT223-4-21

Datasheet:

-

Description:

N-CHANNEL POWER MOSFET

Quantity:

Delivery:

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Payment:

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In Stock : 122759

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.5544

    $0.5544

  • 10

    $0.4851

    $4.851

  • 50

    $0.4158

    $20.79

  • 100

    $0.38115

    $38.115

  • 500

    $0.363825

    $181.9125

  • 1000

    $0.3465

    $346.5

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 150 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 6.6 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 45Ohm @ 120mA, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.3V @ 94µA
Supplier Device Package PG-SOT223-4-21
Drain to Source Voltage (Vdss) 600 V
Power Dissipation (Max) 1.8W (Ta)
Series SIPMOS®
Package / Case TO-261-4, TO-261AA
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 120mA (Ta)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Bulk