BUK661R6-30C118
detaildesc

BUK661R6-30C118

NXP USA Inc.

Product No:

BUK661R6-30C118

Manufacturer:

NXP USA Inc.

Package:

D2PAK

Datasheet:

pdf

Description:

N-CHANNEL POWER MOSFET

Quantity:

Delivery:

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Payment:

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In Stock : 2188

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.386

    $1.386

  • 10

    $1.2474

    $12.474

  • 50

    $1.1088

    $55.44

  • 100

    $0.9702

    $97.02

  • 500

    $0.94248

    $471.24

  • 1000

    $0.924

    $924

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 14964 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 229 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 1.6mOhm @ 25A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.8V @ 1mA
Supplier Device Package D2PAK
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 306W (Tc)
Series Automotive, AEC-Q101, TrenchMOS™
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Mfr NXP USA Inc.
Vgs (Max) ±16V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Bulk