DMN10H120SE-13
detaildesc

DMN10H120SE-13

Diodes Incorporated

Product No:

DMN10H120SE-13

Manufacturer:

Diodes Incorporated

Package:

SOT-223-3

Datasheet:

pdf

Description:

MOSFET N-CH 100V 3.6A SOT223

Quantity:

Delivery:

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Payment:

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In Stock : 7253

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.3596

    $1.3596

  • 10

    $1.22364

    $12.2364

  • 50

    $1.08768

    $54.384

  • 100

    $0.95172

    $95.172

  • 500

    $0.924528

    $462.264

  • 1000

    $0.9064

    $906.4

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 549 pF @ 50 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 110mOhm @ 3.3A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3V @ 250µA
Supplier Device Package SOT-223-3
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 1.3W (Ta)
Series -
Package / Case TO-261-4, TO-261AA
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 3.6A (Ta)
Mfr Diodes Incorporated
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Package Tape & Reel (TR)
Base Product Number DMN10