
Diodes Incorporated
Product No:
DMN10H170SFG-13
Manufacturer:
Package:
PowerDI3333-8
Description:
MOSFET N-CH 100V PWRDI3333
Quantity:
Delivery:

Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$0.275688
$0.275688
10
$0.241227
$2.41227
50
$0.206766
$10.3383
100
$0.189536
$18.9536
500
$0.18092
$90.46
1000
$0.172305
$172.305
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| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 870.7 pF @ 25 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 14.9 nC @ 10 V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 122mOhm @ 3.3A, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerDI3333-8 |
| Drain to Source Voltage (Vdss) | 100 V |
| Power Dissipation (Max) | 940mW (Ta) |
| Series | - |
| Package / Case | 8-PowerVDFN |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 2.9A (Ta), 8.5A (Tc) |
| Mfr | Diodes Incorporated |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Package | Tape & Reel (TR) |
| Base Product Number | DMN10 |