DMN10H170SFG-7
detaildesc

DMN10H170SFG-7

Diodes Incorporated

Product No:

DMN10H170SFG-7

Manufacturer:

Diodes Incorporated

Package:

POWERDI3333-8

Datasheet:

pdf

Description:

MOSFET N-CH 100V PWRDI3333

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

In Stock : 1392

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.284301

    $0.284301

  • 10

    $0.248763

    $2.48763

  • 50

    $0.213225

    $10.66125

  • 100

    $0.195457

    $19.5457

  • 500

    $0.186572

    $93.286

  • 1000

    $0.177688

    $177.688

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 870.7 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 14.9 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 122mOhm @ 3.3A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3V @ 250µA
Supplier Device Package POWERDI3333-8
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 940mW (Ta)
Series -
Package / Case 8-PowerVDFN
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 2.9A (Ta), 8.5A (Tc)
Mfr Diodes Incorporated
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number DMN10