DMT64M2LPSW-13

Diodes Incorporated

Product No:

DMT64M2LPSW-13

Manufacturer:

Package:

PowerDI5060-8 (Type Q)

Datasheet:

Description:

MOSFET N-CH 60V 20.7A/100A PWRDI

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	2799 pF @ 30 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	46.7 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	4.4mOhm @ 50A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	PowerDI5060-8 (Type Q)
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	2.8W (Ta), 83.3W (Tc)
Series	-
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	20.7A (Ta), 100A (Tc)
Mfr	Diodes Incorporated
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	DMT64