DMWSH120H90SM4Q
Diodes Incorporated
Product No:
DMWSH120H90SM4Q
Manufacturer:
Package:
TO-247-4
Datasheet:
Description:
SIC MOSFET BVDSS: >1000V TO247-4
Quantity:
Delivery:
Payment:
In Stock : 8
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$11.025
$11.025
10
$9.9225
$99.225
50
$8.82
$441
100
$7.7175
$771.75
500
$7.497
$3748.5
1000
$7.35
$7350
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Product Information
Parameter Info
User Guide
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 1112 pF @ 1000 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 47.6 nC @ 15 V |
| Mounting Type | Through Hole |
| Rds On (Max) @ Id, Vgs | 97.5mOhm @ 20A, 15V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3.5V @ 5mA |
| Supplier Device Package | TO-247-4 |
| Drain to Source Voltage (Vdss) | 1200 V |
| Power Dissipation (Max) | 235W (Tc) |
| Series | Automotive, AEC-Q101 |
| Package / Case | TO-247-4 |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Mfr | Diodes Incorporated |
| Vgs (Max) | +19V, -8V |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Package | Tube |
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