EPC2204

EPC

Product No:

EPC2204

Manufacturer:

Package:

Die

Datasheet:

Description:

TRANS GAN 100V DIE 5.6MOHM

Quantity:

Delivery:

Payment:

In Stock : 129526

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	851 pF @ 50 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	7.4 nC @ 5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	6mOhm @ 16A, 5V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 4mA
Supplier Device Package	Die
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	-
Series	eGaN®
Package / Case	Die
Technology	GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C	29A (Ta)
Mfr	EPC
Vgs (Max)	+6V, -4V
Drive Voltage (Max Rds On, Min Rds On)	5V
Package	Tape & Reel (TR)