FCP170N60

Fairchild Semiconductor

Product No:

FCP170N60

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Package:

TO-220-3

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Description:

MOSFET N-CH 600V 22A TO220-3

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	2860 pF @ 380 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	55 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	170mOhm @ 11A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.5V @ 250µA
Supplier Device Package	TO-220-3
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	227W (Tc)
Series	SuperFET® II
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	22A (Tc)
Mfr	Fairchild Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk