FDB0260N1007L
detaildesc

FDB0260N1007L

onsemi

Product No:

FDB0260N1007L

Manufacturer:

onsemi

Package:

TO-263-7

Datasheet:

pdf

Description:

MOSFET N-CH 100V 200A TO263-7

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

In Stock : 724

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.575

    $1.575

  • 10

    $1.4175

    $14.175

  • 50

    $1.26

    $63

  • 100

    $1.1025

    $110.25

  • 500

    $1.071

    $535.5

  • 1000

    $1.05

    $1050

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 8545 pF @ 50 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 118 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 2.6mOhm @ 27A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package TO-263-7
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 3.8W (Ta), 250W (Tc)
Series PowerTrench®
Package / Case TO-263-7, D²Pak (6 Leads + Tab)
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 200A (Tc)
Mfr onsemi
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number FDB0260