FDMC2523P

Fairchild Semiconductor

Product No:

FDMC2523P

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Package:

8-MLP (3.3x3.3)

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Description:

POWER FIELD-EFFECT TRANSISTOR, 3

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	270 pF @ 25 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	9 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	1.5Ohm @ 1.5A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	5V @ 250µA
Supplier Device Package	8-MLP (3.3x3.3)
Drain to Source Voltage (Vdss)	150 V
Power Dissipation (Max)	42W (Tc)
Series	QFET®
Package / Case	8-PowerWDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	3A (Tc)
Mfr	Fairchild Semiconductor
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk