FQD12N20LTM-F085P

onsemi

Product No:

FQD12N20LTM-F085P

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Package:

TO-252AA

Datasheet:

Description:

MOSFET N-CH 200V 9A TO252

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	1080 pF @ 25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	21 nC @ 5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	280mOhm @ 4.5A, 10V
Product Status	Not For New Designs
Vgs(th) (Max) @ Id	2V @ 250µA
Supplier Device Package	TO-252AA
Drain to Source Voltage (Vdss)	200 V
Power Dissipation (Max)	2.5W (Ta), 55W (Tc)
Series	QFET®
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	9A (Tc)
Mfr	onsemi
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Package	Tape & Reel (TR)
Base Product Number	FQD12N20