
Goford Semiconductor
Product No:
G075N06MI
Manufacturer:
Package:
TO-263
Datasheet:
-
Description:
N60V, 110A,RD<7M@10V,VTH1.0V~4.0
Quantity:
Delivery:

Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$0.7749
$0.7749
10
$0.69741
$6.9741
50
$0.61992
$30.996
100
$0.54243
$54.243
500
$0.526932
$263.466
1000
$0.5166
$516.6
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| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 6443 pF @ 30 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 90 nC @ 10 V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 20A, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 |
| Drain to Source Voltage (Vdss) | 60 V |
| Power Dissipation (Max) | 160W (Tc) |
| Series | - |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
| Mfr | Goford Semiconductor |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Tape & Reel (TR) |