
Goford Semiconductor
Product No:
G2003A
Manufacturer:
Package:
SOT-23-3
Description:
N190V, 3A,RD<540M@10V,VTH1.0V~3.
Quantity:
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Minimum: 1 Multiples: 1
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Unit Price
Ext Price
1
$0.119261
$0.119261
10
$0.104353
$1.04353
50
$0.089446
$4.4723
100
$0.081992
$8.1992
500
$0.078265
$39.1325
1000
$0.074538
$74.538
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| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 580 pF @ 25 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 540mOhm @ 2A, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | SOT-23-3 |
| Drain to Source Voltage (Vdss) | 190 V |
| Power Dissipation (Max) | 1.8W (Ta) |
| Series | G |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
| Mfr | Goford Semiconductor |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Package | Tape & Reel (TR) |