G33N03S

Goford Semiconductor

Product No:

G33N03S

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Package:

8-SOP

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Description:

N30V,RD(MAX)<12M@10V,RD(MAX)<13M

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	1550 pF @ 15 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	13 nC @ 5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	12mOhm @ 8A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	1.1V @ 250µA
Supplier Device Package	8-SOP
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	2.5W (Tc)
Series	-
Package / Case	8-SOIC (0.154", 3.90mm Width)
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	13A (Tc)
Mfr	Goford Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)