G800N06H
Goford Semiconductor
Product No:
G800N06H
Manufacturer:
Package:
SOT-223
Datasheet:
-
Description:
N60V, 3A,RD<80M@10V,VTH0.7V~1.2V
Quantity:
Delivery:
Payment:
In Stock : 1163
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$0.067826
$0.067826
10
$0.059348
$0.59348
50
$0.050869
$2.54345
100
$0.04663
$4.663
500
$0.044511
$22.2555
1000
$0.042391
$42.391
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Product Information
Parameter Info
User Guide
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 457 pF @ 30 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 4.5 V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 3A, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | SOT-223 |
| Drain to Source Voltage (Vdss) | 60 V |
| Power Dissipation (Max) | 1.2W (Tc) |
| Series | - |
| Package / Case | TO-261-4, TO-261AA |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
| Mfr | Goford Semiconductor |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Package | Tape & Reel (TR) |
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