G80N03K
detaildesc

G80N03K

Goford Semiconductor

Product No:

G80N03K

Manufacturer:

Goford Semiconductor

Package:

TO-252

Datasheet:

pdf

Description:

N30V, 80A,RD<6.5M@10V,VTH1.0V~2.

Quantity:

Delivery:

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Payment:

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In Stock : 1920

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.462

    $0.462

  • 10

    $0.40425

    $4.0425

  • 50

    $0.3465

    $17.325

  • 100

    $0.317625

    $31.7625

  • 500

    $0.303188

    $151.594

  • 1000

    $0.28875

    $288.75

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1950 pF @ 15 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 42 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 6.5mOhm @ 25A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2V @ 250µA
Supplier Device Package TO-252
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 69W (Tc)
Series -
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Mfr Goford Semiconductor
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)