GCMX040B120S1-E1
detaildesc

GCMX040B120S1-E1

SemiQ

Product No:

GCMX040B120S1-E1

Manufacturer:

SemiQ

Package:

SOT-227

Datasheet:

pdf

Description:

SIC 1200V 40M MOSFET SOT-227

Quantity:

Delivery:

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Payment:

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In Stock : 50

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $35.960715

    $35.960715

  • 10

    $32.364644

    $323.64644

  • 50

    $28.768572

    $1438.4286

  • 100

    $25.172501

    $2517.2501

  • 500

    $24.453286

    $12226.643

  • 1000

    $23.97381

    $23973.81

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 3185 pF @ 1000 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 121 nC @ 20 V
Mounting Type Chassis Mount
Rds On (Max) @ Id, Vgs 52mOhm @ 40A, 20V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 10mA
Supplier Device Package SOT-227
Drain to Source Voltage (Vdss) 1200 V
Power Dissipation (Max) 242W (Tc)
Series -
Package / Case SOT-227-4, miniBLOC
Technology SiC (Silicon Carbide Junction Transistor)
Current - Continuous Drain (Id) @ 25°C 57A (Tc)
Mfr SemiQ
Vgs (Max) +25V, -10V
Drive Voltage (Max Rds On, Min Rds On) 20V
Package Tube
Base Product Number GCMX040