GP2T080A120U
detaildesc

GP2T080A120U

SemiQ

Product No:

GP2T080A120U

Manufacturer:

SemiQ

Package:

TO-247-3

Datasheet:

pdf

Description:

SIC MOSFET 1200V 80M TO-247-3L

Quantity:

Delivery:

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Payment:

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In Stock : 635

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $11.7747

    $11.7747

  • 10

    $10.59723

    $105.9723

  • 50

    $9.41976

    $470.988

  • 100

    $8.24229

    $824.229

  • 500

    $8.006796

    $4003.398

  • 1000

    $7.8498

    $7849.8

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1377 pF @ 1000 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 58 nC @ 20 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 100mOhm @ 20A, 20V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 10mA
Supplier Device Package TO-247-3
Drain to Source Voltage (Vdss) 1200 V
Power Dissipation (Max) 188W (Tc)
Series -
Package / Case TO-247-3
Technology SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C 35A (Tc)
Mfr SemiQ
Vgs (Max) +25V, -10V
Drive Voltage (Max Rds On, Min Rds On) 20V
Package Tube
Base Product Number GP2T080A