GT013N04TI

Goford Semiconductor

Product No:

GT013N04TI

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Package:

TO-220

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Description:

N40V, 220A,RD<2.5M@10V,VTH2.0V~5

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	3986 pF @ 20 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	50 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	2.5mOhm @ 30A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	5V @ 250µA
Supplier Device Package	TO-220
Drain to Source Voltage (Vdss)	40 V
Power Dissipation (Max)	90W (Tc)
Series	-
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	220A (Tc)
Mfr	Goford Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube