GT40WR21,Q
Toshiba Semiconductor and Storage
Product No:
GT40WR21,Q
Manufacturer:
Package:
TO-3P(N)
Datasheet:
-
Description:
DISCRETE IGBT TRANSISTOR TO-3PN(
Quantity:
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Payment:
In Stock : 67
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$8.849452
$8.849452
10
$7.964507
$79.64507
50
$7.079562
$353.9781
100
$6.194617
$619.4617
500
$6.017628
$3008.814
1000
$5.899635
$5899.635
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Product Information
Parameter Info
User Guide
| Operating Temperature | 175°C (TJ) |
| Input Type | Standard |
| Test Condition | - |
| Switching Energy | - |
| Current - Collector (Ic) (Max) | 40 A |
| Mounting Type | Through Hole |
| Voltage - Collector Emitter Breakdown (Max) | 1350 V |
| Product Status | Active |
| Td (on/off) @ 25°C | - |
| Supplier Device Package | TO-3P(N) |
| Current - Collector Pulsed (Icm) | 80 A |
| Series | - |
| Vce(on) (Max) @ Vge, Ic | 5.9V @ 15V, 40A |
| Package / Case | TO-3P-3, SC-65-3 |
| Power - Max | 375 W |
| Mfr | Toshiba Semiconductor and Storage |
| Package | Tray |
| IGBT Type | - |
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