Home / Single FETs, MOSFETs / IAUC100N04S6N015ATMA1
IAUC100N04S6N015ATMA1
detaildesc

IAUC100N04S6N015ATMA1

Infineon Technologies

Product No:

IAUC100N04S6N015ATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TDSON-8

Datasheet:

-

Description:

IAUC100N04S6N015ATMA1

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

In Stock : 2938

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.767813

    $0.767813

  • 10

    $0.691031

    $6.91031

  • 50

    $0.61425

    $30.7125

  • 100

    $0.537469

    $53.7469

  • 500

    $0.522113

    $261.0565

  • 1000

    $0.511875

    $511.875

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 3470 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 55 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 1.55mOhm @ 50A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3V @ 50µA
Supplier Device Package PG-TDSON-8
Drain to Source Voltage (Vdss) 40 V
Power Dissipation (Max) 100W (Tc)
Series Automotive, AEC-Q101, OptiMOS™
Package / Case 8-PowerTDFN
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 7V, 10V
Package Tape & Reel (TR)
Base Product Number IAUC100